 | Local disorder effects in silicon nanodevices
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| | H. Mizuta1), Y. Furuta1), G. Evans2), K. Nakazato1) and H. Ahmed2) |
| 1) Hitachi Cambridge Laboratory, Hitachi Europe Ltd.
2) Microelectronics Research Centre, University of Cambridge. |
| | Heavily doped crystalline silicon (c-Si) and polycrystalline silicon (poly-Si) nanowires (NWs) have widely been used as a building block for Coulomb blockade (CB) memory and logic devices by utilising nanometer-scale electron islands naturally formed by local disorders. However, the microscopic properties of the electron islands and tunnel junctions have not been studied in detail, and there has been no clear guideline to optimise them. The aim of this work is to clarify and control the local disorder effects on electron transport in the silicon nanodevices. |
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