 | Potential Device Applications of Neo-Silicon and its Material Characterization
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| | Toshikazu Shimada1)3), Masahiko Ando2) and Shinya Yamaguchi3) |
| 1) CREST, Japan Science and Technology Corporation
2) Hitachi Reserch Laboratory, Hitachi Ltd.
3) Central Research Laboratory, Hitachi Ltd. |
| | Importance of silicon-based nano-materials greatly increases for advanced electronics devices. The nano-silicon materials is a heterogeneous material in the nano-scale range in which surface/interface chemical modification, local strain, carrier trapping, scattering, quantum confinement, tunneling and ballistic effects would dramatically appear even at room temperature. Controlled nano-silicon materials, in which non-bulk characters are enhanced, should be called as neo-silicon. |
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