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「電子・光子等の機能制御」第2回シンポジウム  144-144
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Electronic States and Transport Properties of Semiconductor-Semimetal Heterostructures
J. Inoue1)2), H. Itoh1) and A. Watanabe1)
1) Department of Applied Physics, Nagoya University
2) CREST, Japan Science and Technology Corporation
Semimetallic rare-earth (RE) pnictides are candidates in which the optical properties can be contralled by tuning the electronic states near Fermi level by using superlattices, heterostructures and/or quantum-dot structures. Recent STM measurements for ErP dots suggest that a change from semimetallic(SM) to semiconducting(SC) state occurs by reducing the size of ErP systems [1]. In order to understand the relation between the electronic states and measured results, we adopt a simple model for of a heterojunction of doped-SC/SM/doped-SC and study the dependence of the resistance on the electronic structure and system size.

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