 | Growth of ErP on InP by Face-Down OMVPE Reactor and Surface Morphology
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| | Y. Fujiwara1)2), Y. Isogai1)2), N. Watanabe1)2), T. Yamauchi2), A. Nakamura1)3) and Y. Takeda1)2) |
| 1) Graduate School of Engineering, Nagoya University
2) CREST, Japan Science and Technology Corporation
3) Center for Integrated Research in Science and Engineering, Nagoya University |
| | We designed an OMVPE growth system with a face-down substrate layout. This OMVPE system is connected with a SPM by a UHV tunnel1). The face-down layout was taken to suppress disturbance of the gas flow near the susceptor at the growth temperature and to avoid deposition of byproducts on and near the susceptor. Since the molecular weights (400-700) of Er sources are much heavier than other sources (e.g., TMIn=160 and TBP=90), the flow speed is accelerated by a low pressure (∼70 Torr). |
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