 | Quantum Size and Alloying Effects of InGaAs Single Quantum Dots on GaAs(001) Studied by Scanning Tunneling Spectroscopy
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| | T. Yamauchi1), M. Tabuchi2) and A. Nakamura1)3) |
| 1) CREST, Japan Science and Technology Corporation
2) Graduate School of Engineering, Nagoya University
3) Center for Integrated Research in Science and Engineering, Nagoya University |
| | InAs and InGaAs self-assembled quantum dots (QDs) grown on a GaAs substrate have been intensively investigated for optoelectronic device applications as well as fundamental understanding of quantum size effects (QSEs). Structural studies on InGaAs QDs have recently shown that the actual In composition in a QD is different from the nominal composition and the distribution is nonuniform in a QDs. Here, we represent a correlation between the gap energy and size of single InGaAs QDs. [1]. |
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