 | Artificial Magneto-Photonic Crystals Based on III-V Semiconductors and Their Application to Magneto-Optical Devices
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| | M. Tanaka1)2), H. Shimizu1)2) and J.M. Sun1)2) |
| 1) Department of Electronic Engineering, The University of Tokyo
2) CREST, Japan Science & Technology Corporation |
| | It is widely recognized that artificially designed semiconductor heterostructures and nanostructures are essential for electronic/photonic devices. In this research, we try to add a new spin degree of freedom in the semiconductor-based artificial structures and devices, which we believe can contribute to the future photonics, including the new photonics using strong magneto-optical effect and non-linearity of the materials. So far, we have developed a variety of magnetic/semiconductor hybrid materials and structures grown by molecular beam epitaxy (MBE)[1]. Representatives of such hybrid materials are, ferromagnetic metallic MnGa and MnAs thin films on GaAs and Si substrates, ferromagnetic alloy semiconductor (GaMn)As, and ferromagnetic MnAs nanoclusters embedded in GaAs (hereafter, GaAs:MnAs). These were shown to have good compatibility with existing III-V heterostructures, as well as large magneto-optical effect, therefore can be good candidate materials for magneto-optical devices integrated with III-V optoelectronics[1]. |
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